inchange semiconductor product specification silicon npn power transistors 2SC2626 description ? with to-3pn package ? high voltage,high speed switching ?high reliability applications ? switching regulators ? ultrasonic generators ? high frequency inverters ? general purpose power amplifiers pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (tc=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 400 v v ceo collector-emitter voltage open base 300 v v ebo emitter-base voltage open collector 7 v i c collector current 15 a i b base current 5 a p c collector power dissipation t c =25 ?? 80 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 1.55 ??/w fig.1 simplified outline (to-3pn) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SC2626 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma ;i b =0 300 v v ceo(sus) collector-emitter sustaining voltage i c =1a ;i b =0 300 v v (br)cbo collector-base breakdown voltage i c =1ma ;i e =0 400 v v (br)ebo emitter-base breakdown voltage i e =0.1ma ;i c =0 7 v v cesat collector-emitter saturation voltage i c =6a; i b =1.2a 1.2 v v besat emitter-base saturation voltage i c =6a ;i b =1.2a 1.5 v i cbo collector cut-off current v cb =400v; i e =0 1.0 ma i ebo emitter cut-off current v eb =7v; i c =0 0.1 ma h fe dc current gain i c =6a ; v ce =5v 10 switching times t on turn-on time 0.8 | s t s storage time 2.0 | s t f fall time i c =10a i b1 =-i b2 =2a r l =20 |? ,pw=20 | s duty ? 2% 0.8 | s
inchange semiconductor product specification 3 silicon npn power transistors 2SC2626 package outline fig.2 outline dimensions
inchange semiconductor product specification 4 silicon npn power transistors 2SC2626
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